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Specification Tables

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Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

SOT-23, TO-39, TO-205AD, TO-126, TO-18

Collector Emitter Voltage Max

25 V, 80 V, 250 V, 60 V, 200 V

Power Dissipation

250 mW, 250 W, 60 W, 90 W, 30 W

DC Current Gain hFE

40 hFE, 25 hFE, 30 hFE, 75 hFE, 20 hFE

Transition Frequency

4 MHz, 30 MHz, 3 MHz, 10 MHz, 2.5 MHz

Proximity Sensors

proximity-sensors-img

30 mm, 24 mm, 18 mm, 36.5 mm, 0.5 mm

45 mm, 50 mm, 71 mm, 65 mm, 100 mm

M8, M5, M12, M30, M4

10 to 30V dc, 10 to 30 V dc, 20 → 250 V ac, 10 → 30 V dc, 20 → 250 V ac/dc

Maximum Operating Temperature

70 °C, 115 °C, 85 °C, 125 °C, 150 °C

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