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IDR - Rp
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Specification Tables
1 Hasil
Single Bipolar Junction Transistors
132 Items
Transistor Case Style
TO-92, SOT-23, TO-18, TO-205AD, TO-220
Collector Emitter Voltage Max
450 V, 80 V, 250 V, 100 V, 200 V
Power Dissipation
65 W, 125 W, 60 W, 50 W, 30 W
DC Current Gain hFE
40 hFE, 30 hFE, 75 hFE, 20 hFE, 25 hFE
Transition Frequency
4 MHz, 2.5 MHz, 10 MHz, 3 MHz, 30 MHz
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