x2b1t8 proximity pnp - Eezee

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Specification Tables

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Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

SOT-23, TO-39, TO-205AD, TO-126, TO-18

Collector Emitter Voltage Max

25 V, 80 V, 250 V, 60 V, 200 V

Power Dissipation

250 mW, 250 W, 60 W, 90 W, 30 W

DC Current Gain hFE

40 hFE, 25 hFE, 30 hFE, 75 hFE, 20 hFE

Transition Frequency

4 MHz, 30 MHz, 3 MHz, 10 MHz, 2.5 MHz

Proximity Sensors

proximity-sensors-img

24 mm, 18 mm, 30 mm, 10 mm, 0.5 mm

71 mm, 45 mm, 56 mm, 140 mm, 100 mm

M8, M12, M30, M18, M4

20 → 250 V ac, 10 to 30V dc, 20 to 250 V ac/dc, 10 → 30 V dc, 10 to 30 V dc

Maximum Operating Temperature

85 °C, 115 °C, 70 °C, 125 °C, 150 °C

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