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Specification Tables

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Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

TO-92, SOT-23, TO-18, TO-205AD, TO-220

Collector Emitter Voltage Max

450 V, 80 V, 250 V, 100 V, 200 V

Power Dissipation

65 W, 125 W, 60 W, 50 W, 30 W

DC Current Gain hFE

40 hFE, 30 hFE, 75 hFE, 20 hFE, 25 hFE

Transition Frequency

4 MHz, 2.5 MHz, 10 MHz, 3 MHz, 30 MHz

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Sensor Omron Industrial Automation E3Z-LL66, 20-300MM, Laser, NPN, M8

Rs Pro 2522033 Sensor Kedekatan Gaya Barel Induktif, Deteksi M8 X 1, 2 Mm, Output Npn, 10 - 30 V Dc, IP67

Rs Pro 1646094 Sensor Jarak Bergaya Barel Induktif, M8 X 1, Deteksi 1,5 Mm, Output Npn, 10 - 30 V Dc, IP67

Rs Pro 1646098 Sensor Jarak Bergaya Barel Induktif, M8 X 1, Deteksi 2,5 Mm, Output Npn, 10 - 30 V Dc, IP67

Rs Pro 1646097 Sensor Jarak Bergaya Barel Induktif, M8 X 1, Deteksi 2,5 Mm, Output Npn, 10 - 30 V Dc, IP67

Rs Pro 1646093 Sensor Jarak Bergaya Barel Induktif, M8 X 1, Deteksi 1,5 Mm, Output Npn, 10 - 30 V Dc, IP67

Rs Pro 2377266 Sensor Kedekatan Gaya Barel Induktif, Deteksi M8 X 1, 2 Mm, Output NPN/PNP

Rs Pro 2377270 Sensor Kedekatan Gaya Barel Induktif, Deteksi M8 X 1, 4 Mm, Output NPN/PNP

Rs Pro 2377269 Sensor Kedekatan Gaya Barel Induktif, Deteksi M8 X 1, 2 Mm, Output NPN/PNP

Rs Pro 2377268 Sensor Kedekatan Gaya Barel Induktif, Deteksi M8 X 1, 4 Mm, Output NPN/PNP

Sensor Omron Industrial Automation E3Z-LS66, 40-200MM, Difusi, DC, NPN, M8

Sensor Kedekatan Omron Industrial Automation E2B-S08KS02-MC-C1, NPN/SPST-NO, 2MM, M8